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Si wafer

Based on

1398 Articles
21 Patents
2018 Most recent source

Composition

1

crystalline silicon

silicon c-Si cSi
Type Single Compound
Formula Si
Role raw materials
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
absorption

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Applications

Area Application Nanomaterial Variant Source
nanofluidics/microfluidics

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Characterization

Method Nanomaterial Variant Source
atomic emission spectroscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silica/silicon
  1. JcOPDsRi974GrCwP8UURKTc
  2. U3X9la3ig3rP2vaMXQFSko1BuCZTyQQGTu74sgfs6IKuFFvWQrcySyTHnWB34YjPyWXK3acWgCyMT5TYPMRAHcOdzNwUybUdlekS1gCWQbLB3aKsxqp9vY
Product

Si wafer

Mesa depth: ~ 47 nm

Mesa width: 250 nm

Period of trenches: 500 nm

Thickness: 45 nm

Trench depth: ~ 65 nm

Trench width: 250 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • silica/silicon
  1. mEZptu3xTieKHO52VMyCo1P
  2. 92KkMhYX9VxqHDAhB4Z5fnVEVFttF3LTlSXogXpCnnxENgkj92iOQFjAekhtvDeaP8QArgWGDY1VvZ78UfQwd1LxcxKqyEqBKQNA8rKUNb57MUYbOTdaqe
Product

Si wafer

Mesa depth: ~ 29 nm

Mesa width: 250 nm

Period of trenches: 500 nm

Thickness: 45 nm

Trench depth: ~ 47 nm

Trench width: 250 nm

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • silica/silicon
  1. U64qThxqG3fckGdde30knZ0
  2. e7CU4fhTZcCsR0O0c1ZqQC3YFbN6fJ5G5lST6X7uTcMpcTT72bHBYrL7zdjrswNPGSOc27YZbixRFGxuFCYhijIAAmmC9LO1YpGp6mCmkCJRBfQkz5bhfn
Product

Si wafer

Mesa depth: ~ 55 nm

Mesa width: 250 nm

Period of trenches: 500 nm

Thickness: 45 nm

Trench depth: ~ 85 nm

Trench width: 250 nm

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • Si wafer
  1. J3bDsYF9aYLSY2uDcX7zL
Product

Si wafer

Thickness: 100 nm

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • silica/silicon
  1. GuU2lGpYcjOKofVASGLr6ow
  2. bmUQ1CywgmRADo7GsuCEjAvGfnsI0bGSdCwrW08iUOBtSY4pq0NdhsFiysNCB1U6IKI0xS2vUiPJpVoFQFegAEe9zslCY6DrGYG0oi0b8k6eaqXS3umJER
Product

Si wafer

Mesa width: 250 nm

Period of trenches: 500 nm

Thickness: 45 nm

Trench depth: ~ 31 nm

Trench width: 250 nm

Medium/Support: none

References

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