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example of stacked nanoporous semiconductor

Based on

2 Articles
1 Patents
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium nitride

Type Single Compound
Formula GaN
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electrical resistivity

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
cathodoluminescence spectroscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • ammonia
  • lithium gallate
  1. OpSfy2b
  2. xIbGs9
Product

example of stacked nanoporous semiconductor

Pore size: ~ 100 nm

Medium/Support: none

References

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