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three-dimensionally layered nanowire heterostructure of GaN/AlN

Based on

1 Articles
2011 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium(III) arsenide

gallium(III) nitride gallium nitride n-type GaN i-GaN p-GaN u-GaN
Type Single Compound
Formula GaN
Role core
2

GaN/AlN bilayers

Type Nano Material
Formula
Role layer

Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
STEM-HAADF

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • gallium
  • nitrogen
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Product

three-dimensionally layered nanowire heterostructure of GaN/AlN

Diameter: ~ 9 - ~ 23 nm

Medium/Support: none

References

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