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silicon carbide on aluminium nitride bilayer heterostructures

Based on

13 Articles
1 Patents
2018 Most recent source

Composition

1

silicon carbide

carborundum
Type Single Compound
Formula SiC
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
activation energy

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • quartz
  • methane
  • silicon hydride
  1. AJ4MMqY1
  2. EnS3NpumRbxRN38lAVT7IyoKLraEgBnPzrT2LEJmqIXuwIj8u8dNHz6KU
Product

silicon carbide on aluminium nitride bilayer heterostructures

Crystallite size: 27.4 nm

Thickness: 470 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  1. TlKZ5zmPk29Yz6Z7LZzeGywWaem4w3e58z1
  2. 1UBemmd
  3. gKtgGG3df7TIi
Product

silicon carbide on aluminium nitride bilayer heterostructures

Crystallite size: 30 nm

Grain size: 10 - 100 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • 1,2,4,5-tetrakis(phenylethynyl)benzene
  1. JkQqUG
Product

silicon carbide on aluminium nitride bilayer heterostructures

Crystallite size: 17.6 nm

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • polymethyl(phenyl)siloxane resin
  1. vcwdhdMnN6AaGi
Product

silicon carbide on aluminium nitride bilayer heterostructures

Particle diameter: < 100 nm

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • silicon carbide
  1. eiwNktv2N0tSeMrz1VxtlbvI42f7h53uwFvEBJVu2s49rmNbnEbwyFVufN2t5aR
Product

silicon carbide on aluminium nitride bilayer heterostructures

Island height: 100 nm

Island spacing: 3000 nm

Island width: 3000 nm

Roughness: ~ 2000 nm

Medium/Support: none

References

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