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BP-based p-n homojunction diode

Based on

1 Articles
2017 Most recent source

Composition

1

p-type doped silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

few-layer black phosphorus flakes

black phosphorus nanosheets few-layer BP flakes
Type Nano Material
Formula
Role channels
4

methyl methacrylate resin

methyl methacrylate resin PMMA
Type Polymer
Formula
Role surface protecting layer
5

potassium-modified few-layer black phosphorus flakes

potassium-doped black phosphorus nanosheets K-modified few-layer BP flakes
Type Nano Material
Formula
Role channels
6

titanium/gold film

Ti/Au film
Type Nano Material
Formula
Role source
7

titanium/gold film

Ti/Au film
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. DZ1QDGAWi7GoC3JnkMRHPqhSNWgVizXcYA4JEUo
Product

BP-based p-n homojunction diode

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  1. GDwTmt9WQjB9QiCtft0qam4di0CpGqd11jl5Gj4
Product

BP-based p-n homojunction diode

Size: not specified

Medium/Support: none

References

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