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InGaN/GaN green light-emitting diode

Based on

1 Articles
2017 Most recent source

Composition

1

silver/alumina

Ag/Al2O3
Type Complex Compound
Formula
Role half-wave plate
2

sapphire

Type Single Compound
Formula Al2O3
Role substrate
3

InGaN/GaN quantum well

Type Nano Material
Formula
Role emitter
4

PMMA/Al bi-layered wire grid

DMBiWG structure
Type Nano Material
Formula
Role polarizer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
emission

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
electroluminescence

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • aluminium oxide
  1. 8mVDRqFY0
Product

InGaN/GaN green light-emitting diode

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • aluminium oxide
  1. Jmrj8OCvY
Product

InGaN/GaN green light-emitting diode

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • aluminium oxide
  1. p8s9em0jk
Product

InGaN/GaN green light-emitting diode

Size: not specified

Medium/Support: none

References

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