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n-p-n homojunction MoS2 monolayer field-effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

Cr/Au

Type Complex Compound
Formula
Role electrodes
4

poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)

PEDOT:PSS
Type
Formula
Role
5

monolayer MoS2

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
chopped light-induced photocurrent

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  1. pAmKxSTpchYfgvazi2TdTy0Yx
Product

n-p-n homojunction MoS2 monolayer field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  1. ooALwZq1Ud31ITs0pGZSQljUZ
Product

n-p-n homojunction MoS2 monolayer field-effect transistor

Size: not specified

Medium/Support: none

References

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