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conductive bridging random access memory device

Based on

1 Articles
2017 Most recent source

Composition

1

Si/SiO2

Type Complex Compound
Formula
Role substrate
2

titanium

Type Single Compound
Formula Ti
Role adhesion layer
3

platinum

Type Single Compound
Formula Pt
Role bottom electrode
4

tantalum(IV,V) oxide

Type Single Compound
Formula Ta2O4.2
Role switching layer
5

tantalum(III,IV) oxide

Type Single Compound
Formula Ta2O3.6
Role oxygen vacancy control layer
6

copper

Type Single Compound
Formula Cu
Role top electrode

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
coefficient of variation of high resistance state

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Applications

Area Application Nanomaterial Variant Source
data storage

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • titanium
  • Si/SiO2
Product

conductive bridging random access memory device

Size: not specified

Medium/Support: none

References

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