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NGQD-perovskite/RGO-based phototransistor

Based on

1 Articles
2017 Most recent source

Composition

1

APTES-processed Si/SiO2

Type Complex Compound
Formula
Role substrate
2

reduced graphene oxide

RGO
Type
Formula
Role
3

nitrogen-doped graphene quantum dots/methylammonium lead iodide composite film

NGQD-perovskite composite film
Type Nano Material
Formula
Role perovskite layer
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain
6

methyl methacrylate resin

methyl methacrylate resin PMMA
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on gate voltage

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor for 660 nm monochromatic light

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Applications

Area Application Nanomaterial Variant Source
sensors (excluding biosensors)

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • 3-aminopropyltriethoxysilane
  • Si/SiO2
  1. S6bqYAM
Product

NGQD-perovskite/RGO-based phototransistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • 3-aminopropyltriethoxysilane
  • Si/SiO2
  1. h2eMCgI
Product

NGQD-perovskite/RGO-based phototransistor

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • 3-aminopropyltriethoxysilane
  • Si/SiO2
  1. 2qEAebL
Product

NGQD-perovskite/RGO-based phototransistor

Size: not specified

Medium/Support: none

References

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