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graphene superconducting quantum interference device

Based on

1 Articles
2017 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

graphene encapsulated in hexagonal boron nitride

BN/graphene/BN stack hBN/G/hBN BN/Gr/BN
Type Nano Material
Formula
Role Josephson junction
4

molybdenum rhenium

Type Single Compound
Formula MoRe
Role contacts
5

hydrogen silsesquioxane monomer

hydrogen silsesquioxane octasilsesquioxane XR-1541-002 Fox-16 HSQ
Type Single Compound
Formula H8O12Si8
Role gate dielectrics
6

chromium/gold film

Cr/Au film
Type Nano Material
Formula
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
critical current dependent on right gate voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • hexagonal boron nitride
Product

graphene superconducting quantum interference device

Size: not specified

Medium/Support: none

References

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