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single walled carbon nanotubes-based field-effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

titanium

Type Single Compound
Formula Ti
Role adhesion layer
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain
6

poly{(9,9-didodecylfluorene-2,7-diyl)-alt-{9,9-dihexylfluorene-2,7-diyl}}-wrapped semiconducting single walled carbon nanotubes

s-SWNT/PF12-F6
Type Nano Material
Formula
Role channels

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on drain voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • Si/SiO2
Product

single walled carbon nanotubes-based field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • Si/SiO2
Product

single walled carbon nanotubes-based field-effect transistor

Size: not specified

Medium/Support: none

References

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