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a-IGZO thin-film transistor

Based on

1 Articles
2017 Most recent source

Composition

1

N-doped silicon

n++-Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

amorphous indium gallium zinc oxide

a-IGZO
Type Complex Compound
Formula
Role channel layer
4

copper

Type Single Compound
Formula Cu
Role source
5

copper

Type Single Compound
Formula Cu
Role drain
6

N-DMBI-doped [6,6]-phenyl-C61-butyric acid methyl ester

N-DMBI-doped [6,6]-phenyl-C61-butyric acid methyl ester N-DMBI-doped PCBM
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
contact resistance

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • SiO2-coated Si
  1. zKsrXKo
Product

a-IGZO thin-film transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • SiO2-coated Si
  1. OYtmrCD
Product

a-IGZO thin-film transistor

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • SiO2-coated Si
  1. RwlwRQq
Product

a-IGZO thin-film transistor

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • SiO2-coated Si
  1. exUFi2P
Product

a-IGZO thin-film transistor

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • SiO2-coated Si
  1. Sve7dod
Product

a-IGZO thin-film transistor

Size: not specified

Medium/Support: none

References

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