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a-IGZO thin-film transistor

Based on

1 Articles
2017 Most recent source

Composition

1

N-doped silicon

n++-Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

amorphous indium gallium zinc oxide

a-IGZO
Type Complex Compound
Formula
Role channel layer
4

copper

Type Single Compound
Formula Cu
Role source
5

copper

Type Single Compound
Formula Cu
Role drain
6

methanofullerene phenyl C61 butyric acid methyl ester

[6,6]-phenyl C61 butyric acid methyl ester fullerene [6,6]-phenyl-C61-butyric acid methyl ester fullerene [6,6]-phenyl-C61-butyric acid methyl ester fullerene [6,6]-phenyl-C61-butyric acid methyl ester particles [6,6]-phenyl C61 butyric acid methyl ester molecule 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6) C61 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C60 [6,6]-phenyl-C 60 -butyric acid methyl ester (6,6)-phenyl C61 butyric acid methyl ester (6,6)-phenyl C61-butyric acid methyl ester (6,6)-phenyl C61 butyric acid methyl ester (6,6)-phenyl-C61-butyric acid methyl ester [6,6]- phenyl C61-butyric acid methylester [6,6]-phenyl C61 butyric acid methyl ester [6,6]-phenyl C61-butyric acid methyl ester [6,6]-phenyl C61 butyric acid methyl ester [6,6]-phenyl C61-acid butyric-methyl ester [6,6]-phenyl C61-butyric acid methyl ester [6,6]-phenyl-C61 butyric acid methyl ester [6,6]-phenyl-C61-butyric acid methyl ester [6,6]-phenyl-C60-butyric acid methyl ester [6,6]-phenyl-C61 butyric acid methyl ester [6,6]-phenyl-C61-butyric acid methyl ester [6,6]-phenylC61 butyric acid methyl ester 6,6-phenyl-C61-butyric acid methyl ester [6,6]-phenyl-C61-butyl acid methyl ester [6]-phenyl-C61-butyric acid methyl ester [6,6]-phenyl C61 butyric acid methyl phenyl C61 acid butyric-methyl ester phenyl-C60-butyric acid methyl ester phenyl-C61-butyric acid methyl ester phenyl-C60-butyric acid methyl ester phenyl-C61 butyric acid methyl ester phenyl-C61-butyric acid methyl ester [6,6]-phenyl-C61-butyric acid ester phenyl-C61-butyrate methyl ester C61-butyric acid methyl ester carbon nanoparticles of PCBM PCBM fullerene particles [6,6]-phenyl C61-butyric PC61BM fullerene PC60BM fullerene PC61BM fullerene PCBM fullerenes PCBM fullerene mono-PC61BM mono-PCBM PC[60]BM [60]PCBM C61PCBM PC661BM PC60BM PC61BM PC60BM PC61BM mPCBM PCBM PCMB
Type
Formula
Role
7

(4-(1,3-dimethyl-2,3-dihydro-1 H -benzoimidazol-2-yl) phenyl)dimethylamine

4-(2,3-dihydro-1,3-dimethyl-1H-benzimidazol-2-yl)-N,N-dimethylbenzenamine 4-(1,3-dimethyl-2,3-dihydro-1H-1,3-benzodiazol-2-yl)-N,N-dimethylaniline (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine 4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine 4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl DMBI-H N-DMBI n-DMBI
Type
Formula C17H21N3
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
contact resistance

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • SiO2-coated Si
  1. nRp2MXW
Product

a-IGZO thin-film transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • SiO2-coated Si
  1. OXvcLEt
Product

a-IGZO thin-film transistor

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • SiO2-coated Si
  1. 6zuMscj
Product

a-IGZO thin-film transistor

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • SiO2-coated Si
  1. xLKzITc
Product

a-IGZO thin-film transistor

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • SiO2-coated Si
  1. jApPO2R
Product

a-IGZO thin-film transistor

Size: not specified

Medium/Support: none

References

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