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lithium iodide-passivated PbSe quantum dot film-based field effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

heavily p-doped silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

gold

Type Single Compound
Formula Au
Role source
4

gold

Type Single Compound
Formula Au
Role drain
5

lithium iodide-passivated PbS quantum dot film

LiI-passivated PbS QD film
Type Nano Material
Formula
Role semiconductor layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silica/heavily p-doped silicon
  1. p7ypsgm
  2. ncaRQWxEvG
Product

lithium iodide-passivated PbSe quantum dot film-based field effect transistor

Size: not specified

Medium/Support: none

References

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