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In2O3 bottom-gate top-contact thin film transistor

Based on

1 Articles
2017 Most recent source

Composition

1

heavily-doped silicon

Si++
Type Complex Compound
Formula
Role gate
2

hydroxylated silica

hydroxylated SiO2
Type Complex Compound
Formula
Role gate dielectrics
3

indium oxide film

In2O3 film
Type Nano Material
Formula
Role semiconductor layer
4

aluminium

aluminum
Type Single Compound
Formula Al
Role source
5

aluminium

aluminum
Type Single Compound
Formula Al
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • indium(III) nitrate
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Product

In2O3 bottom-gate top-contact thin film transistor

Size: not specified

Medium/Support: none

References

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