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graphene/h-BN/Si3N4 heterostructure field-effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

n++Si

Type Complex Compound
Formula
Role gate
2

silicon nitride

Type Single Compound
Formula Si3N4
Role gate dielectrics
3

hexagonal boron nitride

h-BN hBN
Type Single Compound
Formula BN
Role gate dielectrics
4

polycrystalline graphene

monolayer graphene graphene PCG
Type Nano Material
Formula
Role semiconductor layer
5

chromium

Type Single Compound
Formula Cr
Role adhesion layer
6

gold

Type Single Compound
Formula Au
Role source
7

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
acoustic deformation potential dependent on gate voltage sign

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • methane
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  2. v8Kimh2iPRv3IZG3oa0qRt0kHCHZ
  3. wPpyokzk4Vlm6IoOIHj
Product

graphene/h-BN/Si3N4 heterostructure field-effect transistor

Size: not specified

Medium/Support: none

References

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