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sulfur vacancies-containing MoS2 field effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

n-Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

sulfur vacancies-containing monolayer MoS2 flakes

Type Nano Material
Formula
Role semiconducting channel
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

sulfur vacancies-containing MoS2 field effect transistor

Size: not specified

Medium/Support: none

References

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