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ReS2 2D FET based on an ion gel coupling capacitor

Based on

1 Articles
2017 Most recent source

Composition

1

heavily-doped silicon

Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

rhenium disulfide flakes

ReS2 flakes
Type Nano Material
Formula
Role channels
4

chromium

Type Single Compound
Formula Cr
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role drain
6

gold

Type Single Compound
Formula Au
Role source
7

2-hydroxy-2-methylpropiophenone/poly(ethylene glycol) diacrylate

HOMPP/PEG-DA
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • rhenium(IV) sulfide
  • Si/SiO2
Product

ReS2 2D FET based on an ion gel coupling capacitor

Size: not specified

Medium/Support: none

References

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