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top-gate bottom-contact organic field-effect transistor based on poly(2,5-bis(alkyl)-1,4-dioxopyrrolo[3,4-c]pyrrole-3,6-diyl-terthiophene-2,5'-diyl)

Based on

1 Articles
2017 Most recent source

Composition

1

poly(ethylene terephthalate)

polyethylene terephthalate polyester PETE PET
Type Polymer
Formula
Role substrate
2

gold

Type Single Compound
Formula Au
Role source
3

gold

Type Single Compound
Formula Au
Role drain
4

poly(styrenesulfonate cesium)

PSSCs
Type Polymer
Formula
Role polyelectrolyte counterion monolayer
5

poly(2,5-bis(alkyl)-1,4-dioxopyrrolo[3,4-c]pyrrole-3,6-diyl-terthiophene-2,5'-diyl)

DPPT2-T
Type Polymer
Formula
Role channel layer
6

polystyrene

PS
Type Polymer
Formula
Role gate dielectrics
7

chromium

Type Single Compound
Formula Cr
Role adhesion layer
8

silver

Type Single Compound
Formula Ag
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
contact resistance

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • poly(ethylene terephthalate)
Product

top-gate bottom-contact organic field-effect transistor based on poly(2,5-bis(alkyl)-1,4-dioxopyrrolo[3,4-c]pyrrole-3,6-diyl-terthiophene-2,5'-diyl)

Size: not specified

Medium/Support: none

References

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