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thin-film transistor

Based on

1 Articles
2017 Most recent source

Composition

1

n-doped silicon

n-Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role gate dielectrics
4

n-tetradecyl phosphonic acid

n-tetradecyl phosphonic acid 1-tetradecylphosphonic acid n-tetradecylphosphonic acid tetradecylphosphonic acid HC14-PA C14-PA TDPA TPA
Type
Formula C14H31O3P
Role
5

2,7-dicyclohexylbenzo[lmn][3,8]phenanthroline-1,3,6,8(2H,7H)-tetraone film

NDI-cy6 film
Type Nano Material
Formula
Role channels
6

calcium

Type Single Compound
Formula Ca
Role electrodes
7

silver

Type Single Compound
Formula Ag
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility dependent on drain voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • Al2O3/SiO2/n-Si
  • n-tetradecyl phosphonic acid
  1. 6bvy1LCM4f
Product

thin-film transistor

Size: not specified

Medium/Support: none

References

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