Loading ...

AlGaInP-GaInP double heterojunction light-emitting diode

Based on

1 Articles
2017 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

n-doped gallium arsenide

n++ GaAs
Type Complex Compound
Formula
Role buffer layer
3

n-doped aluminium gallium indium phosphide

n+-Al0.2Ga0.31In0.49P
Type Complex Compound
Formula
Role n-type semiconductor layer
4

indium gallium phosphide

InGaP
Type
Formula
Role
5

p-doped aluminium gallium indium phosphide

p+-Al0.2Ga0.31In0.49P
Type Complex Compound
Formula
Role p-type semiconducting layer
6

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula GaAs
Role capping layer
7

palladium/germanium/gold trilayer

Pd/Ge/Au trilayer
Type Nano Material
Formula
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current

More information available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
optoelectronics

More information available to subscribers only.

Or, view sample content

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial