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[2-(9-(4-(octyloxy)phenyl)-9H-fluoren-2-yl)thiophene]3-based memory device

Based on

3 Articles
2018 Most recent source

Composition

1

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
2

silicon

Type
Formula Si
Role
3

phosphorus-doped silicon

n+-doped silicon
Type
Formula
Role
4

100 nm thick SiO2 substrate

100 nm-thick silica layer silicon oxide nanolayer 100 nm thick SiO2 layer 100-nm-thick SiO2 layer silicon dioxide film SiO2 insulator layer silicon oxide layer silica nanofilm SiO2 nanofilm silica layer silica film SiO2 layer SiO2 layer SiO2 film
Type
Formula
Role
5

chromium/gold film

Cr/Au film
Type
Formula
Role
6

AZ 40 XT

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier concentration

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • [2-(9-(4-(octyloxy)phenyl)-9H-fluoren-2-yl)thiophene]3
  • Si/SiO2
  • 2-ethyl-2-hydroxymethyl-1,3-propanediol
  1. Vcn4ua4
Product

[2-(9-(4-(octyloxy)phenyl)-9H-fluoren-2-yl)thiophene]3-based memory device

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • [2-(9-(4-(octyloxy)phenyl)-9H-fluoren-2-yl)thiophene]3
  • Si/SiO2
  • 2-ethyl-2-hydroxymethyl-1,3-propanediol
  1. hme2G3T
Product

[2-(9-(4-(octyloxy)phenyl)-9H-fluoren-2-yl)thiophene]3-based memory device

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • silicon-on-insulator
Product

[2-(9-(4-(octyloxy)phenyl)-9H-fluoren-2-yl)thiophene]3-based memory device

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • silicon-on-insulator
Product

[2-(9-(4-(octyloxy)phenyl)-9H-fluoren-2-yl)thiophene]3-based memory device

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • methyl-terminated octadecyltrichlorosilane
Product

[2-(9-(4-(octyloxy)phenyl)-9H-fluoren-2-yl)thiophene]3-based memory device

Size: not specified

Medium/Support: none

References

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