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HfO2-based resistive random access memory

Based on

1 Articles
2017 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

titanium

Type Single Compound
Formula Ti
Role adhesion layer
3

platinum

Type Single Compound
Formula Pt
Role bottom electrode
4

substoichiometric aluminum oxide

noncrystalline aluminum oxide anodized aluminum oxide aluminium suboxide oxidized aluminium aluminium oxide aluminum oxide alumina
Type
Formula AlO(x)
Role
5

hafnium oxide

hafnia
Type
Formula HfO(x)
Role
6

titanium nitride

Type Single Compound
Formula TiN
Role top electrode

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
electron energy-loss spectroscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • titanium
Product

HfO2-based resistive random access memory

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • titanium
Product

HfO2-based resistive random access memory

Size: not specified

Medium/Support: none

References

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