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back-gate transistor device

Based on

1 Articles
2017 Most recent source

Composition

1

p++-Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

multilayer silicon nanosheets film

multilayer Si nanosheets film multilayer silicene film
Type
Formula
Role
4

silicon nanosheets

silicon sheets Si nanosheets silicene
Type Nano Material
Formula
Role channel layer
5

silver

Type Single Compound
Formula Ag
Role source
6

silver

Type Single Compound
Formula Ag
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
Raman spectroscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silver
  1. oHrFHKrc5pwD3zzbd
Product

back-gate transistor device

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • silver
  1. s7exldu6fm8UC0W9B
Product

back-gate transistor device

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • silver
  1. JCstx2dtJ9Fb5nT2t
Product

back-gate transistor device

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • silver
  1. yEM9t7mXaz0bxdJId
Product

back-gate transistor device

Size: not specified

Medium/Support: none

References

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