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multilayer hexagonal boron nitride-based resistive random access memory device

Based on

1 Articles
2017 Most recent source

Composition

1

nickel-doped copper

Ni-doped Cu
Type Complex Compound
Formula
Role bottom electrode
2

multilayer hexagonal boron nitride

multilayer h-BN stacks thin h-BN sheets h-BN nanosheets multilayer h-BN
Type
Formula
Role
3

titanium

Type
Formula Ti
Role
4

gold

Type
Formula Au
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
current-voltage curve showing resistive switching

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Applications

Area Application Nanomaterial Variant Source
data storage

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. RrqRy1fkRDOgmTs7bZcMNODTiQSub2Ex
Product

multilayer hexagonal boron nitride-based resistive random access memory device

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  1. LJCAmRdA22a9JYYuSvW6qqFdQI4gdNv3
Product

multilayer hexagonal boron nitride-based resistive random access memory device

Size: not specified

Medium/Support: none

References

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