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back-gated FET device on Zn-doped MoS2 monolayer

Based on

1 Articles
2017 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

Zn-doped MoS2 thin film

bilayer zinc-doped MoS2 Zn-doped MoS2 film Zn-doped MoS2 Zn-MoS2 film Zn:MoS2 film
Type Nano Material
Formula
Role channel layer
4

titanium/gold film

Type Nano Material
Formula
Role source
5

titanium/gold film

Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • molybdenum(VI) oxide
  • sulphur
  • silica/silicon
See all (4)
  1. EsBbewauJlYcHfUfeCVuRjX
  2. U8CC0XM5FMoNZkcB8AWaRVj4PG3hnND9qOy1zg9
  3. TloR7NUh6o6oP8ZuGGIBwhaa7
Product

back-gated FET device on Zn-doped MoS2 monolayer

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • molybdenum(VI) oxide
  • sulphur
  • silica/silicon
See all (4)
  1. PMjRBN82RHxltd70Ko9CYxX
  2. qMyKJpvG4AiHgVHI8Dtpj8PRFRwf5uTwpNY9221
  3. qHrGQe5gPHvI2sqeyIJ40iFLC
Product

back-gated FET device on Zn-doped MoS2 monolayer

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • molybdenum(VI) oxide
  • sulphur
  • silica/silicon
See all (4)
  1. PFJ6zctRV1Df1guZD9jLF1y
  2. UDQ1tl9BOlosweRJ7VINIXrqOAqhCM3bPtkUqOH
  3. DY45BNsUVr5DeLcoh6PMQVao1
Product

back-gated FET device on Zn-doped MoS2 monolayer

Size: not specified

Medium/Support: none

References

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