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P(NDI2OD-T2) top-gate bottom-contact organic field-effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role substrate
3

chromium

Type Single Compound
Formula Cr
Role adhesion layer
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain
6

PEIE

Type Polymer
Formula
Role electron injection layer
7

P(NDI2OD-T2) film

Type Nano Material
Formula
Role semiconductor layer
8

CYTOP

Type Polymer
Formula
Role gate dielectrics
9

aluminium

aluminum
Type Single Compound
Formula Al
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on drain voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  1. jQmIbQIJDubknTJJ9T
Product

P(NDI2OD-T2) top-gate bottom-contact organic field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  1. vSAeer6DdkiBNoQ6tn
Product

P(NDI2OD-T2) top-gate bottom-contact organic field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  1. 11FzeiBjlSenSCGqBl
Product

P(NDI2OD-T2) top-gate bottom-contact organic field-effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  1. IdgcIPwiHimAWYIM4z
Product

P(NDI2OD-T2) top-gate bottom-contact organic field-effect transistor

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  1. HEMnd8TF5f2io8YnDk
Product

P(NDI2OD-T2) top-gate bottom-contact organic field-effect transistor

Size: not specified

Medium/Support: none

References

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