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vertical transistor memory device

Based on

1 Articles
2017 Most recent source

Composition

1

soda-lime-silica glass

soda-lime glass glass
Type Complex Compound
Formula
Role substrate
2

chromium

Type Single Compound
Formula Cr
Role adhesion layer
3

gold

Type Single Compound
Formula Au
Role gate
4

substoichiometric aluminum oxide

noncrystalline aluminum oxide anodized aluminum oxide aluminium suboxide oxidized aluminium aluminium oxide aluminum oxide alumina
Type Single Compound
Formula AlO(x)
Role gate dielectrics
5

poly(2-vinylnaphthalene)

PVN
Type Polymer
Formula
Role chargeable electret polymer layer
6

poly(N-alkyl-diketopyrrolo-pyrrole dithienylthieno [3, 2-b] thiophene)

DPP-DTT
Type Polymer
Formula
Role ambipolar polymer layer
7

copper

Type Single Compound
Formula Cu
Role source
8

lithium fluoride

Type Single Compound
Formula LiF
Role insulating layer
9

pentacene

PEN Pen P5 Pc Pe
Type Single Compound
Formula C22H14
Role unipolar polymer layer
10

copper

Type Single Compound
Formula Cu
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on drain voltage

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. S8iznM1VaTU8fd9Em2
Product

vertical transistor memory device

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  1. 1kKJgmAKUCAXdsZvGW
Product

vertical transistor memory device

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  1. LmtOU7huaPG2TEE0lI
Product

vertical transistor memory device

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  1. 3fjPXFRap0J1IRlUc0
Product

vertical transistor memory device

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  1. v25aY2HNX4TiKjJA0X
Product

vertical transistor memory device

Size: not specified

Medium/Support: none

References

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