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vertical transistor memory device

Based on

1 Articles
2017 Most recent source

Composition

1

soda-lime-silica glass

soda-lime glass glass
Type Complex Compound
Formula
Role substrate
2

chromium

Type Single Compound
Formula Cr
Role adhesion layer
3

gold

Type Single Compound
Formula Au
Role gate
4

substoichiometric aluminum oxide

noncrystalline aluminum oxide anodized aluminum oxide oxidized aluminium aluminium suboxide aluminium oxide aluminum oxide alumina
Type Single Compound
Formula AlO(x)
Role gate dielectrics
5

poly(2-vinylnaphthalene)

PVN
Type Polymer
Formula
Role chargeable electret polymer layer
6

poly(N-alkyl-diketopyrrolo-pyrrole dithienylthieno [3, 2-b] thiophene)

DPP-DTT
Type Polymer
Formula
Role ambipolar polymer layer
7

copper

Type Single Compound
Formula Cu
Role source
8

lithium fluoride

Type Single Compound
Formula LiF
Role insulating layer
9

pentacene

PEN Pen Pc P5 Pe
Type Single Compound
Formula C22H14
Role unipolar polymer layer
10

copper

Type Single Compound
Formula Cu
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on drain voltage

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. khqUwtjgEqrIXlJZDV
Product

vertical transistor memory device

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  1. YIORNgmFtAyxhugFnB
Product

vertical transistor memory device

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  1. tGA9xwcE6Q0DdUooM3
Product

vertical transistor memory device

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  1. ih4PECHEjZoM87N9FI
Product

vertical transistor memory device

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  1. 4XUWKKIJJGALa9GH5B
Product

vertical transistor memory device

Size: not specified

Medium/Support: none

References

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