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WSe2 field-effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

Si/SiO2

Type Complex Compound
Formula
Role substrate
2

hexagonal boron nitride

h-BN hBN
Type
Formula BN
Role
3

tungsten(IV) selenide

tungsten diselenide tungsten selenide
Type
Formula WSe2
Role
4

hexagonal boron nitride

h-BN hBN
Type
Formula BN
Role
5

Pd/Au

Type Complex Compound
Formula
Role source
6

Pd/Au

Type Complex Compound
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
activation gaps energy dependent on Landau level filling factor

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • Si/SiO2
  • tungsten(IV) selenide
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Product

WSe2 field-effect transistor

Size: not specified

Medium/Support: none

References

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