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organic Mott insulator-based field-effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

SiO2/p++-Si

Type Complex Compound
Formula
Role substrate
2

titanium/gold film

Ti/Au film
Type Nano Material
Formula
Role source
3

titanium/gold film

Ti/Au film
Type Nano Material
Formula
Role drain
4

triethoxycaprylylsilane

n-octyltriethoxysilane triethoxy(octyl)silane octyl-triethoxysilane octyltriethoxysilane octyl-TES OTES OTS
Type
Formula C14H32O3Si
Role
5

κ-(BEDT-TTF)2CuN(CN)2Cl film

Type Nano Material
Formula
Role channels

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
critical electrical conductivity

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • SiO2/p++-Si
Product

organic Mott insulator-based field-effect transistor

Size: not specified

Medium/Support: none

References

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