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field-effect transistor based on monolayer molybdenum disulfide-coated hexagonal boron nitride

Based on

1 Articles
2017 Most recent source

Composition

1

p-doped silicon

p-type silicon p-type Si silicon
Type
Formula Si
Role
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

monolayer molybdenum disulfide on hexagonal boron nitride

single layer MoS2 film on h-BN monolayer MoS2 film on h-BN monolayer MoS2 on h-BN MoS2 grown on h-BN MoS2 on h-BN MoS2/h-BN
Type Nano Material
Formula
Role channel layer
4

graphene nanosheets

graphene sheets graphene
Type
Formula
Role
5

hexagonal boron nitride

h-BN hBN
Type
Formula BN
Role
6

titanium/gold film

Type Nano Material
Formula
Role source
7

titanium/gold film

Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Product

field-effect transistor based on monolayer molybdenum disulfide-coated hexagonal boron nitride

Size: not specified

Medium/Support: none

References

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