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top-gated carbon nanotube field-effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

Si/SiO2

Type Complex Compound
Formula
Role back gate
2

alumina-partially coated single walled carbon nanotubes

alumina-partially coated single-walled carbon nanotubes alumina-partially coated single-wall carbon nanotubes alumina-partially coated SWCNT Al2O3/SWNT
Type Nano Material
Formula
Role semiconductors
3

palladium

Type Single Compound
Formula Pd
Role source
4

palladium

Type Single Compound
Formula Pd
Role drain
5

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role gate dielectrics
6

aluminium

aluminum
Type Single Compound
Formula Al
Role upper gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
contact resistance dependent on contact length

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

top-gated carbon nanotube field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
Product

top-gated carbon nanotube field-effect transistor

Size: not specified

Medium/Support: none

References

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