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twisted bilayer graphene dual-gated device

Based on

1 Articles
2017 Most recent source

Composition

1

hexagonal boron nitride

h-BN hBN
Type Single Compound
Formula BN
Role dielectric layer
2

graphite

Type Single Compound
Formula C
Role electrodes
3

twisted bilayer graphene

Type Nano Material
Formula
Role semiconductor layer
4

chromium

Type Single Compound
Formula Cr
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role upper gate
6

graphite

Type Single Compound
Formula C
Role bottom gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
activated gap dependent on magnetic field

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • hexagonal boron nitride
  1. xkOE7HmMsaZm4QFxpWzK2jSHM
Product

twisted bilayer graphene dual-gated device

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • hexagonal boron nitride
  1. IYFcgbc97DcOfac0DtTAmiYC0
Product

twisted bilayer graphene dual-gated device

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • hexagonal boron nitride
  1. MZCkF6ekbYpL30XbKibTTpBob
Product

twisted bilayer graphene dual-gated device

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • hexagonal boron nitride
  1. piGkpnhvvfDB916gyAR2OwvG6
Product

twisted bilayer graphene dual-gated device

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • hexagonal boron nitride
  1. Msbx3qTdFSfVyULPzRrwfqKgb
Product

twisted bilayer graphene dual-gated device

Size: not specified

Medium/Support: none

References

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