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back-gated few-layer graphene field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

p-doped silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

activated mono/bilayer graphene flakes

single/double layer graphene graphene bilayer graphene/monolayer graphene few layer graphene nanosheets few-layer graphene bilayered graphene activated graphene bilayer graphene graphene flakes graphene FLG BLG
Type Nano Material
Formula
Role semiconductor layer
4

nickel

Type Single Compound
Formula Ni
Role source
5

nickel

Type Single Compound
Formula Ni
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
contact resistance

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

back-gated few-layer graphene field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
Product

back-gated few-layer graphene field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
Product

back-gated few-layer graphene field-effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
Product

back-gated few-layer graphene field-effect transistor

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
Product

back-gated few-layer graphene field-effect transistor

Size: not specified

Medium/Support: none

References

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