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non-volatile resistive switching random access memory device based on multilayer composed of nitrogen-doped graphene oxide

Based on

1 Articles
2016 Most recent source

Composition

1

polyethersulfone

PES
Type Polymer
Formula
Role substrate
2

aluminium

aluminum
Type Nano Material
Formula
Role electrodes
3

multilayer composed of N-GO(+)

nitrogen-doped graphene oxide GO doped with nitrogen nitrogen-doped GO [N-GO(+)]60
Type Nano Material
Formula
Role active dielectric layer
4

gold

Type Nano Material
Formula
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current

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Applications

Area Application Nanomaterial Variant Source
data storage

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • polyethersulfone
Product

non-volatile resistive switching random access memory device based on multilayer composed of nitrogen-doped graphene oxide

Size: not specified

Medium/Support: none

References

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