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BP/ReS2 heterojunction-based negative differential resistance device

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

BP nanoflakes

phosphorene
Type
Formula
Role
4

rhenium disulfide nanosheets

ReS2 nanosheets
Type
Formula
Role
5

titanium

Type Single Compound
Formula Ti
Role adhesion layer
6

palladium

Type Single Compound
Formula Pd
Role drain
7

palladium

Type Single Compound
Formula Pd
Role source

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on gate voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
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Product

BP/ReS2 heterojunction-based negative differential resistance device

Size: not specified

Medium/Support: none

References

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