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Ag NW overlapped monolayer WS2 FET

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role back gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

monolayer tungsten disulfide nanosheets

example of graphene-like material single layer tungsten disulfide tungsten disulfide nanosheets single-layer tungsten sulfide tungsten disulfide monolayers tungsten selenide nanosheets monolayer tungsten disulfide tungsten disulfide monolayer tungsten sulfide nanosheets monolayer tungsten sulfide monolayered WS2 nanosheets tungsten sulfide monolayer monolayer WS2 nanosheets WS2 monolayer nanosheets suspended WS2 monolayers suspended WS2 nanosheets monolayer WS2 crystals WS2 monolayer flakes monolayer WS2 flakes monolayers of WS2 single-layer WS2 monolayered WS2 WS2 nanosheets WS2 monolayers WS2 nanoflakes WS2 nanolayers monolayer WS2 WS2 monolayer WS2 crystals WS2 flakes 1 ML WS2 1-L WS2 1L WS2 WS2 ML
Type
Formula
Role
4

silver nanowires

Ag nanowires silver NW Ag NW AgNW
Type
Formula
Role
5

Cr/Au

Type Complex Compound
Formula
Role drain
6

Cr/Au

Type Complex Compound
Formula
Role source
7

methyl methacrylate resin

methyl methacrylate resin PMMA
Type
Formula
Role

Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

Ag NW overlapped monolayer WS2 FET

Size: not specified

Medium/Support: none

References

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