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2,5-bis(n-hexyl)-3,6-bis(5-bromothiophen-2-yl)-pyrrolo[3,4-c]pyrrole-1,4-dione-based organic thin-film transistor

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role gate dielectrics
4

12, 12, 13, 13, 14, 14, 15, 15, 16, 16, 17, 17, 18, 18, 18-pentadecylfluorooctadecylphosphonic acid

12, 12, 13, 13, 14, 14, 15, 15, 16, 16, 17, 17, 18, 18, 18-pentadecafluorooctadecylphosphonic acid 12,12,13,13,14,14,15,15,16,16,17,17,18,18,18-pentadecylfluorooctadecylphosphonic acid 12,12,13,13,14,14,15,15,16,16,17,17,18,18,18-pentadecafluorooctadecylphosphonic acid semi-fluorinated phosphonic acid FC18-PA FOPA
Type Single Compound
Formula C18H24F15O3P
Role gate dielectrics
5

2,5-bis(n-hexyl)-3,6-bis(5-bromothiophen-2-yl)-pyrrolo[3,4-c]pyrrole-1,4-dione

Type Single Compound
Formula C26H30Br2N2O2S2
Role semiconductor layer
6

gold

Type Single Compound
Formula Au
Role source
7

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
hole mobility

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • oxygen
Product

2,5-bis(n-hexyl)-3,6-bis(5-bromothiophen-2-yl)-pyrrolo[3,4-c]pyrrole-1,4-dione-based organic thin-film transistor

Size: not specified

Medium/Support: none

References

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