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2,5-bis(2-ethylhexyl)-3,6-bis(5-cyanothiophen-2-yl)pyrrolo[3,4-c]-pyrrole-1,4-dione-based n-channel organic thin-film transistor

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role gate dielectrics
4

1-tetradecanephosphonic acid

n-tetradecyl phosphonic acid 1-tetradecylphosphonic acid n-tetradecylphosphonic acid tetradecylphosphonic acid HC14-PA C14-PA TDPA TPA
Type Single Compound
Formula C14H31O3P
Role gate dielectrics
5

2,5-bis(2-ethylhexyl)-3,6-bis(5-cyanothiophen-2-yl)pyrrolo[3,4-c]-pyrrole-1,4-dione

Type Single Compound
Formula C32H38N4O2S2
Role semiconductor layer
6

gold

Type Single Compound
Formula Au
Role source
7

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electron mobility

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • oxygen
Product

2,5-bis(2-ethylhexyl)-3,6-bis(5-cyanothiophen-2-yl)pyrrolo[3,4-c]-pyrrole-1,4-dione-based n-channel organic thin-film transistor

Size: not specified

Medium/Support: none

References

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