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MoS2-based transistor device after PPh3 n-doping

Based on

1 Articles
2016 Most recent source

Composition

1

boron-doped silicon

boron-doped Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

triphenylphosphine-doped molybdenum disulfide nanosheets

MoS2 layers after PPh3 doping MoS2 layers doped by PPh3 PPh3-doped MoS2
Type Nano Material
Formula
Role channel layer
4

titanium-palladium layer

titanium/palladium film Ti/Pd film
Type Nano Material
Formula
Role source
5

titanium-palladium layer

titanium/palladium film Ti/Pd film
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier concentration

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor

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Applications

Area Application Nanomaterial Variant Source
sensors (excluding biosensors)

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

MoS2-based transistor device after PPh3 n-doping

Size: not specified

Medium/Support: none

References

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