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F4BDOPV-2Se-based top-gate/bottom-contact field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

SiO2/Si

Type Complex Compound
Formula
Role substrate
2

titanium

Type Single Compound
Formula Ti
Role adhesion layer
3

gold

Type Single Compound
Formula Au
Role source
4

gold

Type Single Compound
Formula Au
Role drain
5

F4BDOPV-2Se film

Type Nano Material
Formula
Role semiconductor layer
6

CTL809M

CYTOP
Type Polymer
Formula
Role gate dielectrics
7

aluminium

aluminum
Type Single Compound
Formula Al
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
Product

F4BDOPV-2Se-based top-gate/bottom-contact field-effect transistor

Size: not specified

Medium/Support: none

References

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