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ion-gel-gated electric double layer transistor

Based on

1 Articles
2016 Most recent source

Composition

1

lanthanum aluminium oxide

lanthanum aluminium oxide lanthanum aluminum oxide lanthanum aluminate LAO(001) LAO
Type Single Compound
Formula LaAlO3
Role substrate
2

La0.5Sr0.5CoO3

Type Single Compound
Formula La0.5Sr0.5CoO3
Role channels
3

magnesium

Type Single Compound
Formula Mg
Role source electrode
4

platinum

Type Single Compound
Formula Pt
Role source electrode
5

magnesium

Type Single Compound
Formula Mg
Role drain electrode
6

platinum

Type Single Compound
Formula Pt
Role drain electrode
7

magnesium

Type Single Compound
Formula Mg
Role gate electrode
8

platinum

Type Single Compound
Formula Pt
Role gate electrode
9

poly(vinylidene fluoride-co-hexafluoropropylene)/1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide

P(VDF-HFP)/EMI:TFSI
Type Complex Compound
Formula
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
Arrhenius plot

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • lanthanum aluminium oxide
  1. J8uvNKU
  2. Mg1jhTYHdmh
Product

ion-gel-gated electric double layer transistor

Size: not specified

Medium/Support: none

References

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