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back-gated ReS2 transistor

Based on

1 Articles
2016 Most recent source

Composition

1

heavily doped p-type Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

rhenium(IV) sulfide flakes

rhenium disulfide flakes ReS2 flakes ReS2 film
Type Nano Material
Formula
Role channel layer
4

Ti/Au

Type Complex Compound
Formula
Role source
5

Ti/Au

Type Complex Compound
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
chopped light-induced photocurrent

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • rhenium(IV) sulfide
  • p-type Si/SiO2
Product

back-gated ReS2 transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • rhenium(IV) sulfide
  • p-type Si/SiO2
Product

back-gated ReS2 transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • rhenium(IV) sulfide
  • p-type Si/SiO2
Product

back-gated ReS2 transistor

Size: not specified

Medium/Support: none

References

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