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tungsten(IV) telluride device

Based on

1 Articles
2016 Most recent source

Composition

1

SiO2 on p++-Si substrate

SiO2 on Si substrate
Type Nano Material
Formula
Role substrate
2

tungsten(IV) telluride film

WTe2 film
Type Nano Material
Formula
Role channels
3

titanium

Type Single Compound
Formula Ti
Role electrodes
4

gold

Type Single Compound
Formula Au
Role electrodes
5

aluminum oxide film

AlOx film
Type Nano Material
Formula
Role resist layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
contact resistance

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. lzkcdMUQJt4tymYWRQG
Product

tungsten(IV) telluride device

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  1. S5uUeelOO6MFOvM96Na
Product

tungsten(IV) telluride device

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  1. rIUWHuXjAA6ebKNoEtS
Product

tungsten(IV) telluride device

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  1. h6BVjjat3zIPKWHFfWd
Product

tungsten(IV) telluride device

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  1. emOcYVTLjbCueKIUi0W
Product

tungsten(IV) telluride device

Size: not specified

Medium/Support: none

References

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