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double-gate WSe2 FET with Al2O3/TiPc as date dielectric

Based on

1 Articles
2016 Most recent source

Composition

1

gold

Type Single Compound
Formula Au
Role back gate
2

titanium

Type Single Compound
Formula Ti
Role adhesion layer
3

p+ Si wafer

Type Complex Compound
Formula
Role dielectric layer
4

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role gate dielectrics
5

tungsten selenide multilayer

WSe2
Type Nano Material
Formula
Role conducting layer
6

alumina-titanyl phthalocyanine film

Al2O3/TiOPc
Type Nano Material
Formula
Role top gate dielectric
7

palladium

Type Single Compound
Formula Pd
Role upper gate
8

palladium

Type Single Compound
Formula Pd
Role source
9

palladium

Type Single Compound
Formula Pd
Role drain
10

titanium

Type Single Compound
Formula Ti
Role adhesion layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
current density

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • p+ Si wafer
  • titanium
Product

double-gate WSe2 FET with Al2O3/TiPc as date dielectric

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • p+ Si wafer
  • titanium
Product

double-gate WSe2 FET with Al2O3/TiPc as date dielectric

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • p+ Si wafer
  • titanium
Product

double-gate WSe2 FET with Al2O3/TiPc as date dielectric

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • p+ Si wafer
  • titanium
Product

double-gate WSe2 FET with Al2O3/TiPc as date dielectric

Size: not specified

Medium/Support: none

References

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