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PαNDSDTFBT-based bottom-gate/top-contact organic field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

n-type heavily doped Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

n-octadecyltrichlorosilane moiety

trichloro(octadecyl)silane moiety octadecyltrimethoxysilane moiety octadecyl trichlorosilane moiety octadecyltrichlorosilane moiety n-octadecylsilanetriyl moiety octadecylsilanetriyl residue octadecylsilanetriyl group n-octadecylsilane moiety octadecylsilyl fragment octadecylsilane moiety octadecylsilyl moiety CH3-(CH2)17-Si- octadecylsilane octadecylsilyl ODTS moiety OTS residue OTS moiety ODS moiety OS moiety
Type Single Compound
Formula -C18H37Si-
Role adhesion layer
4

poly(4,9-didodecylnaphtho[1,2-b:5,6-b']bis-(selenophene)-2,7-diyl-co-2,6-(4,4-bis(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b']dithiophene)

PαNDSDTFBT
Type Polymer
Formula
Role semiconductor layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • trichloro(octadecyl)-silane
  • n-type heavily doped Si/SiO2
Product

PαNDSDTFBT-based bottom-gate/top-contact organic field-effect transistor

Size: not specified

Medium/Support: none

References

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