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graphene/hexagonal boron nitride/graphene-based tunnel transistor

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

hexagonal boron nitride

h-BN hBN
Type
Formula BN
Role
4

graphene nanosheets

graphene sheets graphene
Type Nano Material
Formula
Role bottom electrode
5

hexagonal boron nitride nanosheets

few-layer hexagonal boron nitride boron nitride nanosheets hexagonal boron nitride hBN nanosheets BN nanosheets h-BN hBN
Type
Formula
Role
6

activated mono/bilayer graphene flakes

single/double layer graphene graphene bilayer graphene/monolayer graphene few layer graphene nanosheets few-layer graphene bilayered graphene activated graphene bilayer graphene graphene flakes graphene FLG BLG
Type Nano Material
Formula
Role top electrode

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
real part of wave function distribution map

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • Si wafer
  1. wuw79WHmfUz2BFlZiBKQCce
Product

graphene/hexagonal boron nitride/graphene-based tunnel transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • Si wafer
  1. DxlFsyobOi54G5r336h6aWT
Product

graphene/hexagonal boron nitride/graphene-based tunnel transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • Si wafer
  1. xJruyfA7pq4dWF3YuLaNMDR
Product

graphene/hexagonal boron nitride/graphene-based tunnel transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • Si wafer
  1. aQBp9qcxAtYLTzCQVnHxEeg
Product

graphene/hexagonal boron nitride/graphene-based tunnel transistor

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • Si wafer
  1. 2HZYSAeaQzo9Quj924R5cV4
Product

graphene/hexagonal boron nitride/graphene-based tunnel transistor

Size: not specified

Medium/Support: none

References

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