Loading ...

WSe2 nanosheet-based field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

heavily doped silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

few-layer tungsten selenide

WSe2 nanosheets few-layer WSe2
Type Nano Material
Formula
Role channel layer
4

nickel

Type Single Compound
Formula Ni
Role source
5

nickel

Type Single Compound
Formula Ni
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
contact resistance

More information/entries available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
electronics

More information available to subscribers only.

Or, view sample content

Characterization

Method Nanomaterial Variant Source
optical microscopy

More information available to subscribers only.

Or, view sample content

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

WSe2 nanosheet-based field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
Product

WSe2 nanosheet-based field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Product

WSe2 nanosheet-based field-effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
Product

WSe2 nanosheet-based field-effect transistor

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Product

WSe2 nanosheet-based field-effect transistor

Size: not specified

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial