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SiO2/Cu-shunt capacitor-capped NiFe/Pt-containing polymer/Cu inverse spin Hall effect device

Based on

1 Articles
2016 Most recent source

Composition

1

soda-lime-silica glass

soda-lime glass glass
Type Complex Compound
Formula
Role substrate
2

copper

Type Single Compound
Formula Cu
Role electrodes
3

C48H70N2P2Pt

Type Single Compound
Formula C48H70N2P2Pt
Role semiconductor layer
4

nickel-iron alloy

nickel-iron alloy Ni/Fe permalloy Ni80Fe20 alloy NiFe alloy permalloy Py
Type Single Compound
Formula Ni80Fe20
Role ferromagnetic layer
5

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectric layer
6

copper

Type
Formula Cu
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
microwave pulse-induced normalized inverse spin Hall effect peak current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • soda-lime-silica glass
  • copper
Product

SiO2/Cu-shunt capacitor-capped NiFe/Pt-containing polymer/Cu inverse spin Hall effect device

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • soda-lime-silica glass
  • copper
Product

SiO2/Cu-shunt capacitor-capped NiFe/Pt-containing polymer/Cu inverse spin Hall effect device

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • soda-lime-silica glass
  • copper
Product

SiO2/Cu-shunt capacitor-capped NiFe/Pt-containing polymer/Cu inverse spin Hall effect device

Size: not specified

Medium/Support: none

References

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